Journal
PHYSICAL REVIEW B
Volume 79, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.125302
Keywords
dielectric function; excitons; II-VI semiconductors; microcavities; reflectivity; wide band gap semiconductors; zinc compounds
Funding
- ANR [ANR-06-BLAN-0135]
- Agence Nationale de la Recherche (ANR) [ANR-06-BLAN-0135] Funding Source: Agence Nationale de la Recherche (ANR)
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We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle-resolved reflectivity measurements, corroborated by transfer-matrix simulations, show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities. The impact of the large excitonic absorption, which enables a ZnO bulklike behavior to be observed even in the strong-coupling regime, is illustrated both experimentally and theoretically by considering cavities with increasing thickness.
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