Journal
PHYSICAL REVIEW B
Volume 80, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.233405
Keywords
band structure; energy gap; graphene; semiconductor superlattices; tight-binding calculations
Funding
- DOE
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Based on the tight-binding model, we investigate band structures of graphene nanohole (GNH) superlattices as a function of NH size and density. One common origin of band gaps for GNH superlattices with NHs of either armchair or zigzag edges is the quantum-confinement effect due to the periodic potential introduced by the NHs, which turns the semimetallic sheet into a direct-gap semiconductor. Additional band gaps also open for GNH superlattices with NHs of zigzag edges in a ferromagnetic ground state, arising from the staggered sublattice potential on the zigzag edges due to edge magnetization. Our calculations reveal a generic scaling relation that both types of band gaps increase linearly with the product of NH size and density.
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