Journal
PHYSICAL REVIEW B
Volume 80, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.081409
Keywords
ab initio calculations; electron-phonon interactions; elemental semiconductors; lead; metallic thin films; quantum wells; scanning tunnelling spectroscopy; silicon; spectral line broadening
Funding
- Swiss National Science Foundation
- University of the Basque Country
- Departamento de Educacion del Gobierno Vasco
- Spanish Ministerio de Ciencia y Tecnologia (MCyT) [FIS 2004-06490-C03-01]
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Using low-temperature scanning tunneling spectroscopy at 5 and 50 K, we studied the linewidth of unoccupied quantum-well states in ultrathin Pb islands, grown on Si(111) on two different Pb/Si interfaces. A quantitative analysis of the differential conductance spectra allowed us to determine the electron-electron (e-e), electron-phonon (e-ph) and the interface and defect contributions to the lifetime. Layer-dependent ab initio calculations of the e-ph linewidth contribution are in excellent agreement with the data. Importantly, the sum of the calculated e-e and e-ph lifetime broadening follows the experimentally observed quadratic energy dependence.
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