Journal
PHYSICAL REVIEW B
Volume 79, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.233202
Keywords
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Funding
- NSERC (Canada)
- FQRNT (Quebec)
- German Federal Ministry of Education and Research [01BU0624]
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It is experimentally shown that silicon is easily amorphized by low-keV H ions at the relatively high temperature of 150 K and for an ion fluence equivalent to <1 DPA (displacement per atom). The a-Si layer is much more stable against recrystallization than a-Si produced by other ions and more stable against chemical modification than c-Si that is H-implanted at room temperature. These results are unexplained by the current atomic collision theory, including molecular-dynamics simulations, but they demonstrate the stabilizing effect of dangling bond passivation by H atoms in postulated, metastable, amorphous droplets.
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