Journal
PHYSICAL REVIEW B
Volume 79, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.153307
Keywords
electron density; magnetoelectronics; oscillations; spin Hall effect
Funding
- NSF [DMR-0802830]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0802830] Funding Source: National Science Foundation
Ask authors/readers for more resources
We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse-voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available