4.6 Article

Band alignment of ZnO/ZnS heterojunction prepared through magnetron sputtering and measured by X-ray photoelectron spectroscopy

Journal

VACUUM
Volume 122, Issue -, Pages 6-11

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2015.09.005

Keywords

ZnO; ZnS; Heterojunction; Band offset; Thin films

Funding

  1. Fundamental Research Funds for the Central Universities [2013QNA04]
  2. Natural Science Youth Foundation of Jiangsu Province [BK20130198]

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The Abstract: In this study, three film samples (ZnO, ZnS and ZnO/ZnS heterojunction) were prepared by a facile magnet sputtering deposition method. All the films exhibited the good crystal quality and smooth surface. Further, the X-ray photoelectron spectroscopy (XPS) was employed to examine the band offset between ZnO and ZnS layers at the interface. It was demonstrated that the ZnO/ZnS bilayers exhibited a II-type band alignment with a valence-band (VB) offset of 1.04 eV, which was accordance with the calculation results. It thus suggested that such a heterostructure was suitable for application as a photocatalyst or photoanode for water splitting or photoelectric conversion. (C) 2015 Elsevier Ltd. All rights reserved.

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