Journal
PHYSICAL REVIEW B
Volume 79, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.201203
Keywords
boron; diamond; electric admittance; fluctuations in superconductors; magnetoresistance; metal-insulator transition; nanostructured materials; optical susceptibility; thin films
Funding
- Research Foundation Flanders (FWO) [G.0068.07, G.0430.07]
- Quantum Effects in Clusters and Nanowires [IAP-P6/42]
- Nanosystems Initiative Munich, NIM
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We studied the transport properties of highly boron-doped nanocrystalline diamond thin films at temperatures down to 50 mK. The system undergoes a doping-induced metal-insulator transition with an interplay between intergranular conductance g and intragranular conductance g(0), as expected for a granular system. The conduction mechanism in the case of the low-conductivity films close to the metal-insulator transition has a temperature dependence similar to Efros-Shklovskii type of hopping. On the metallic side of the transition, in the normal state, a logarithmic temperature dependence of the conductivity is observed, as expected for a metallic granular system. Metallic samples far away from the transition show similarities to heavily boron-doped single-crystal diamond. Close to the transition, the behavior is richer. Global phase coherence leads in both cases to superconductivity (also checked by ac susceptibility), but a peak in the low-temperature magnetoresistance measurements occurs for samples close to the transition. Corrections to the conductance according to superconducting fluctuations account for this negative magnetoresistance.
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