Journal
PHYSICAL REVIEW B
Volume 80, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.233104
Keywords
bismuth compounds; charge exchange; chemical analysis; electronic structure; metal-insulator transition; X-ray absorption spectra
Funding
- Ministry of Education, Science, Sports and Culture [171105002, 18350097, 19GS0207, 19014010, 19340098, 19052008]
- Global COE Program
- International Center for Integrated Research and Advanced Education in Materials Science
- Chemical Synthesis Core Research Institute
- Elements Science and Technology Project
- Grants-in-Aid for Scientific Research [19014010] Funding Source: KAKEN
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To investigate the change in the electronic structure of BiNiO3 accompanied by metal-insulator (MI) transition, we measured x-ray absorption spectroscopy (XAS) spectra at the Ni K and Bi L edges under various pressures up to 6 GPa. Both Bi L-3 and Ni K edge XAS spectra clearly change at 4 GPa, indicating the electronic state in Bi and Ni ion changes. A quantitative analysis of the Ni K edge spectra in the pre-edge region based on the charge-transfer cluster model including multiplet terms revealed that the electronic configuration changes from d(8) in the insulating phase to 56% d(7)+44% d(8)L_ in the metal phase. From these results, we concluded that the MI transition in BiNiO3 is induced by the collapse of charge-transfer gap and is governed by the redistribution of O 2p ligand holes.
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