Journal
PHYSICAL REVIEW B
Volume 79, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.161201
Keywords
carrier density; III-V semiconductors; impact ionisation; indium compounds; phonons; terahertz spectroscopy
Funding
- ONR [N00014-06-1-0463]
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Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm(2), we observed carrier heating and impact ionization dynamics. The number of carriers produced exceeds 10(16) cm(-3), corresponding to a change in carrier density Delta N/N of 700% at 80 K. The onset of a well-defined absorption peak at 1.2 THz is an indication of changes in longitudinal optical (LO) and longitudinal acoustic (LA) phonon populations due to cooling of the hot electrons.
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