4.6 Article

Engineering artificial graphene in a two-dimensional electron gas

Journal

PHYSICAL REVIEW B
Volume 79, Issue 24, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.241406

Keywords

electron mobility; Fermi level; gallium arsenide; graphene; III-V semiconductors; two-dimensional electron gas

Funding

  1. CNR-INFM
  2. NSF [DMR-0705460, CHE-0117752, CHE-0641523]
  3. New York State Office of Science, Technology, and Academic Research (NYSTAR)

Ask authors/readers for more resources

At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity, which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphenelike system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultrahigh-mobility electrons with linearly dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available