Journal
PHYSICAL REVIEW B
Volume 79, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.140505
Keywords
boron; crystal structure; electrical resistivity; high-pressure effects; metal-insulator transition; nanowires; size effect; superconducting semiconductors; superconducting transition temperature
Funding
- Center of Excellence (COE) Project of Science Technology Agency of Japan
- National Science Foundation of China [50571111, 10874230]
- Ministry of Science and Technology of China [2005CB724400]
- CoMePhS
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We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron (beta-r-B), these BNWs show a semiconductor-metal transition at much lower pressure than bulk beta-r-B. Also, we found that these BNWs become superconductors with T-c=1.5 K at 84 GPa, at the pressure of which bulk beta-r-B is still a semiconductor, via in situ resistance measurements in a diamond-anvil cell. With increasing pressure, T-c of the BNWs increases. The occurrence of superconductivity in the BNWs at a pressure as low as 84 GPa probably arises from the size effect.
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