Journal
PHYSICAL REVIEW B
Volume 80, Issue 2, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.024114
Keywords
gallium compounds; high-temperature electronics; III-V semiconductors; lattice constants; light emitting diodes; semiconductor thin films; superlattices; titanium compounds; transmission electron microscopy; wide band gap semiconductors; X-ray diffraction
Funding
- ONR/DoD
- U.S. Department of Energy [DEFG02-91-ER45439]
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Gallium nitride (GaN) in its stable wurtzite phase has proven its utility in light-emitting diodes and diode lasers as well as high-temperature and high-power electronic devices. In addition to its equilibrium wurtzite phase, GaN exhibits two cubic polymorphs, a zinc-blende phase and a high-pressure rocksalt phase. Here, we report the pseudomorphic stabilization of the high-pressure rocksalt phase of GaN within TiN/GaN multilayers as verified using x-ray diffraction and high-resolution transmission electron microscopy. High-resolution lattice imaging confirmed that the lattice parameter of the rocksalt GaN phase is 0.41 nm. The critical thickness of the GaN film that can be pseudomophically stabilized in rocksalt phase within TiN/GaN superlattices is determined to be less than 2 nm.
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