Journal
PHYSICAL REVIEW B
Volume 79, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.245330
Keywords
aluminium compounds; biexcitons; configuration interactions; crystal field interactions; dielectric function; dielectric polarisation; gallium compounds; III-V semiconductors; semiconductor quantum dots; spin-orbit interactions; wide band gap semiconductors
Ask authors/readers for more resources
Excitons and biexcitons in GaN/AlN quantum dots (QD) were investigated with special emphasis on the use of these QDs for single-photon source applications. The theoretical methodology for the calculation of single-particle states was based on 8-band strain-dependent envelope function Hamiltonian, with the effects of spin-orbit interaction, crystal-field splitting, and piezoelectric and spontaneous polarizations taken into account. Exciton and biexciton states were found using the configuration-interaction method. Optimal QD heights for their use in single-photon emitters were determined for various diameter to height ratios. The competition between strong confinement in GaN QDs and internal electric field, generally reported in wurtzite GaN, was also discussed, as well as its effect on appearance of bound biexcitons..
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available