Journal
PHYSICAL REVIEW B
Volume 79, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.125411
Keywords
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Funding
- Indiana 21st Century
- Sandia National Laboratories' Excellence in Science and Engineering program
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Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures (1450-1600 degrees C) in vacuum. A continuous graphene surface layer was formed at temperatures above 1475 degrees C. X-ray photo-electron spectroscopy (XPS) and scanning tunneling microscopy (STM) were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moire superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic-scale resolution, considerable insight into the growth mechanisms of FLG on the carbon face of SiC is obtained.
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