Journal
PHYSICAL REVIEW B
Volume 80, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.085305
Keywords
elemental semiconductors; Fermi level; nanostructured materials; semiconductor doping; silicon
Funding
- Bundesministerium fur Bildung und Forschung (BMBF) [FKZ 03N8708]
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Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and nanostructured Si with shallow or buried selectively doped regions under ambient conditions. A unique KPFM model correlates the measured Kelvin bias with the calculated Fermi energy, and thus allows quantitative dopant profiling. We show that due to an asymmetric electric-dipole formation at the semiconductor surface the measured Kelvin bias is related with the difference between Fermi energy and respective band edge, and independent of the probe potential.
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