Journal
PHYSICAL REVIEW B
Volume 80, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.085406
Keywords
crystal symmetry; epitaxial growth; epitaxial layers; graphene; honeycomb structures; multilayers; scanning tunnelling microscopy; silicon compounds; wide band gap semiconductors
Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [19310085, 20340077]
- Grants-in-Aid for Scientific Research [20340077, 19310085] Funding Source: KAKEN
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We used low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) to investigate domain structures of epitaxial few-layer graphene grown on SiC(0001). Dark-field (DF) LEEM images formed using (10) and (01) beams clearly indicate that bilayer graphene consists of two types of domains, which have threefold symmetry and are rotated by 180 degrees with respect to each other. The DF LEEM images show clear domain contrasts at energies where (10)- and (01)-beam intensities calculated for bulk graphite are largely different. This means that the two types of domains are different in stacking: AB and AC stackings. The stacking domains are also supported by the STM images of bilayer graphene showing both hexagonal and honeycomb patterns.
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