Journal
PHYSICAL REVIEW B
Volume 79, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.125305
Keywords
catalysts; charge exchange; CMOS integrated circuits; dielectric materials; energy states; extended defects; Fermi level; Frenkel defects; hafnium compounds; interface structure; nickel; rhodium; work function
Funding
- National Science Foundation [DMR-0548182]
- Welch Foundation [F-1624]
Ask authors/readers for more resources
We show how oxygen vacancies in metal oxides next to high-work-function metals are stabilized by an oxygen exchange reaction with the metal, and by a charge transfer from the vacancy energy level to the metal Fermi level. The results help explain some of the Fermi-level pinning problems in high-k dielectric gate stacks in complimentary metal oxide semiconductor technology and also explain the driving force behind the strong metal-support interaction in oxide-supported catalysts.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
