Journal
PHYSICAL REVIEW B
Volume 79, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.115434
Keywords
electrical resistivity; graphene; nanostructured materials
Funding
- NSFMRSEC [DMR-0819860]
- Princeton Center for Complex Materials
- NSF [DMR-084173]
- State of Florida
- Department of Energy
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0819860] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [GRANTS:14060168] Funding Source: National Science Foundation
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We have investigated the behavior of the resistance of graphene at the n=0 Landau level in an intense magnetic field H. Employing a low-dissipation technique (with power P < 3 fW), we find that at low temperature T, the resistance at the Dirac point R-0(H) undergoes a 1000-fold increase from similar to 10 k Omega to 40 M Omega within a narrow interval of field. The abruptness of the increase suggests that a transition to an insulating ordered state occurs at the critical field H-c. Results from five samples show that H-c depends systematically on the disorder, as measured by the offset gate voltage V-0. Samples with small V-0 display a smaller critical field H-c. Empirically, the steep increase in R-0 fits accurately a Kosterlitz-Thouless-type correlation length over three decades. The curves of R-0 vs T at fixed H approach the thermal-activation form with a gap Delta similar to 15 K as H -> H-c(-), consistent with a field-induced insulating state.
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