4.6 Article

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

Journal

PHYSICAL REVIEW B
Volume 79, Issue 11, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.115305

Keywords

electron-hole recombination; III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanostructured materials; nanotechnology; photoluminescence; Raman spectra; scanning electron microscopy; self-assembly; semiconductor growth; semiconductor plasma; wide band gap semiconductors

Funding

  1. EU
  2. ministry of science and education [MAT2006-01825]
  3. Ministerio de Educacion y Ciencia of Spain, FPU

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Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

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