Journal
PHYSICAL REVIEW B
Volume 79, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.035304
Keywords
carrier mean free path; gallium arsenide; III-V semiconductors; spin dynamics; spin Hall effect; spin polarised transport
Funding
- NSF MRSEC [DMR 02132802]
- NSF [DMR 0541988, PHY 0646094]
- DOE [DEAC 02-98 CH 10886]
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A nonlocal electric response in the spin Hall regime, resulting from spin diffusion mediating charge conduction, is predicted. The spin-mediated transport stands out due to its long-range character, and can give dominant contribution to nonlocal resistance. The characteristic range of nonlocality, set by the spin diffusion length, can be large enough to allow detection of this effect in materials such as GaAs despite its small magnitude. The detection is facilitated by a characteristic nonmonotonic dependence of transresistance on the external magnetic field, exhibiting sign changes and decay.
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