Journal
PHYSICAL REVIEW B
Volume 80, Issue 19, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.195315
Keywords
aluminium compounds; electron-phonon interactions; gallium arsenide; III-V semiconductors; semiconductor quantum dots; triplet state
Funding
- Polish MNiSW [N N202 1336 33]
- Czech Science Foundation [202/07/J051]
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We show that singlet-triplet superpositions of two-electron spin states in a double quantum dot undergo a phonon-induced pure dephasing which relies only on the tunnel coupling between the dots and on the Pauli-exclusion principle. As such, this dephasing process is independent of spin-orbit coupling or hyperfine interactions. The physical mechanism behind the dephasing is elastic phonon scattering, which persists to much lower temperatures than real phonon-induced transitions. Quantitative calculations performed for a lateral GaAs/AlGaAs gate-defined double quantum dot yield microsecond dephasing times at sub-Kelvin temperatures, which is consistent with experimental observations.
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