Journal
PHYSICAL REVIEW B
Volume 79, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.075428
Keywords
ballistic transport; contact resistance; diffusion; field effect transistors; graphene; semiconductor device noise; shot noise
Funding
- Institut Universitaire de France
- Agence Nationale de la Recherche [ANR-07-NANO-011-05]
- Focus Center Research Program (FCRP)
- (U.S.) Air Force Office of Scientific Research [FA9550-04-1-0384, F49620-03-1-0256]
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Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene field effect transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
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