Journal
PHYSICAL REVIEW B
Volume 79, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.081303
Keywords
aluminium compounds; diffusion; gallium arsenide; III-V semiconductors; Overhauser effect; photoluminescence; semiconductor heterojunctions; semiconductor quantum dots; spin dynamics
Funding
- EPSRC-GB [EP/C54563X/1, EP/C545648/1, GR/S76076, EP/G601642/1]
- Engineering and Physical Sciences Research Council [EP/C54563X/1, EP/C545648/1] Funding Source: researchfish
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Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlxGa1-xAs interface quantum dots by detecting the time dependence of the Overhauser shift in photoluminescence spectra. Long nuclear polarization decay times of approximate to 1 min have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin-diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.
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