Journal
PHYSICAL REVIEW B
Volume 79, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.085429
Keywords
bending; compressibility; gallium arsenide; III-V semiconductors; indium compounds; multilayers; nanostructured materials; phase diagrams; phase transformations; semiconductor thin films
Funding
- BMBF [03N8711]
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An equilibrium phase diagram for the shape of compressively strained free-hanging films is developed by total strain energy minimization. For small strain gradients Delta epsilon, the film wrinkles, while for sufficiently large Delta epsilon, a phase transition from wrinkling to bending occurs. We consider competing relaxation mechanisms for free-hanging films, which have rolled up into tube structures, and we provide an upper limit for the maximum achievable number of tube rotations.
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