4.6 Article

Bending and wrinkling as competing relaxation pathways for strained free-hanging films

Journal

PHYSICAL REVIEW B
Volume 79, Issue 8, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.085429

Keywords

bending; compressibility; gallium arsenide; III-V semiconductors; indium compounds; multilayers; nanostructured materials; phase diagrams; phase transformations; semiconductor thin films

Funding

  1. BMBF [03N8711]

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An equilibrium phase diagram for the shape of compressively strained free-hanging films is developed by total strain energy minimization. For small strain gradients Delta epsilon, the film wrinkles, while for sufficiently large Delta epsilon, a phase transition from wrinkling to bending occurs. We consider competing relaxation mechanisms for free-hanging films, which have rolled up into tube structures, and we provide an upper limit for the maximum achievable number of tube rotations.

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