Journal
PHYSICAL REVIEW B
Volume 79, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.075415
Keywords
doping; interface states; lanthanum compounds; multilayers; quantum wells; Seebeck effect
Funding
- Grant-in-Aid for Scientific Research on Priority Areas
- QPEC, Graduate School of Engineering, University of Tokyo
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We present evidence for hole injection into LaAlO(3)/LaVO(3)/LaAlO(3) quantum wells near a polar surface of LaAlO(3) (001). As the surface is brought in proximity to the LaVO(3) layer, an exponential drop in resistance and a decreasing positive Seebeck coefficient are observed below a characteristic coupling length of 10-15 unit cells. We attribute this behavior to a crossover from an atomic reconstruction of the AlO(2)-terminated LaAlO(3) surface to an electronic reconstruction of the vanadium valence. These results suggest a general approach to tunable hole doping in oxide thin-film heterostructures.
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