Related references
Note: Only part of the references are listed.Optimal capping layer thickness for stacked quantum dots
X. B. Niu et al.
PHYSICAL REVIEW LETTERS (2008)
An application of multigrid methods for a discrete elastic model for epitaxial systems
R. E. Caflisch et al.
JOURNAL OF COMPUTATIONAL PHYSICS (2006)
The elastic field of a surface step: The Marchenko-Parshin formula in the linear case
Cameron R. Connell et al.
JOURNAL OF COMPUTATIONAL AND APPLIED MATHEMATICS (2006)
Level set simulation of directed self-assembly during epitaxial growth
X. Niu et al.
PHYSICAL REVIEW B (2006)
Alloyed Ge(Si)/Si(001) islands: The composition profile and the shape transformation
C Lang et al.
PHYSICAL REVIEW B (2005)
Critical aspects of alloying and stress relaxation in Ge/Si(100) islands
G Hadjisavvas et al.
PHYSICAL REVIEW B (2005)
Local strain-mediated chemical potential control of quantum dot self-organization in heteroepitaxy
B Yang et al.
PHYSICAL REVIEW LETTERS (2004)
Origin of apparent critical thickness for island formation in heteroepitaxy
YH Tu et al.
PHYSICAL REVIEW LETTERS (2004)
Probing the lateral composition profile of self-assembled islands
U Denker et al.
PHYSICAL REVIEW LETTERS (2003)
Stranski-Krastanow transition and epitaxial island growth
AG Cullis et al.
PHYSICAL REVIEW B (2002)
Instability and decomposition on the surface of strained alloy films
ZF Huang et al.
PHYSICAL REVIEW B (2002)
Atomistic simulation of strain relaxation in InxGa1-xAs/GaAs quantum dots with nonuniform composition -: art. no. 115316
MA Migliorato et al.
PHYSICAL REVIEW B (2002)
Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs
T Walther et al.
PHYSICAL REVIEW LETTERS (2001)
Surface roughness and alloy stability interdependence in lattice-matched and lattice-mismatched heteroepitaxy
C Priester et al.
PHYSICAL REVIEW B (2000)