Journal
PHYSICAL REVIEW B
Volume 79, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.033301
Keywords
aluminium compounds; III-V semiconductors; indium compounds; lattice dynamics; phonons; Raman spectra; semiconductor thin films
Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [18069005]
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AlxIn1-xN films (0.03 <= x <= 0.80), particularly indium-rich AlInN films, are studied by Raman scattering. We clearly observe a two-mode behavior of A(1)(LO) phonon and prove that the previous theoretical prediction and experimental attribution of InN-like A(1)(LO) to E-2(H) mode are incorrect. Using the modified random-element isodisplacement model of Chang and Mitra, the information about AlInN lattice vibration is extracted. We believe that these results imply a strong positive force interaction between In and Al sublattices in AlInN. The strong interaction makes AlInN different with AlGaN in A(1)(LO) phonon mode behavior.
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