Journal
PHYSICAL REVIEW B
Volume 80, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.245407
Keywords
annealing; band structure; bismuth; elemental semiconductors; Fermi level; metallic thin films; nucleation; photoemission; quantum wells; silicon; solid-state phase transformations; surface states
Funding
- U.S. Department of Energy [DE-FG02-07ER46383]
- ACS Petroleum Research Fund
- U.S. National Science Foundation [DMR-05-03323, DMR-09-06444, DMR-05-37588]
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We have observed using angle-resolved photoemission a structural phase transformation of Bi films deposited on Si(111)-7x7. Films with thicknesses 20 to similar to 100 A degrees, upon annealing, first order into a metastable pseudocubic (PC) phase and then transform into a stable rhombohedral (RH) phase with very different topologies for the quantum-well subband structures. The PC phase shows a surface band with a maximum near the Fermi level at Gamma, whereas the RH phase shows a Dirac-like subband around M along K-M-K. The formation of the metastable phase over a wide thickness range can be attributed to a surface nucleation mechanism.
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