Journal
PHYSICAL REVIEW B
Volume 79, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.201302
Keywords
ab initio calculations; Ge-Si alloys; nanowires; semiconductor materials; semiconductor quantum wires
Funding
- MIUR-PRIN
- CINECA-CNR-INFM
- ETSF project [211956]
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Using first-principles methods, we investigate the structural and electronic properties of SiGe nanowires-based heterostructures, whose lattice contains the same number of Si and Ge atoms but arranged in a different manner. Our results demonstrate that the wires with a clear interface between Si and Ge regions not only form the most stable structures but show a strongly reduced quantum confinement effect. Moreover, we, with the inclusion of many-body effects, prove that these nanowires-under optical excitation-display a clear electron-hole separation property which can have relevant technological applications.
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