Journal
PHYSICAL REVIEW B
Volume 79, Issue 19, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.193304
Keywords
aluminium compounds; dynamic nuclear polarisation; gallium arsenide; III-V semiconductors; Landau levels; quantum Hall effect; semiconductor heterojunctions
Funding
- MEXT
- Sumitomo Foundation
- Special Coordination Funds for Promoting Science and Technology
- Grants-in-Aid for Scientific Research [21340077] Funding Source: KAKEN
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We study dynamic nuclear polarization (DNP) induced by breakdown of the fractional quantum Hall (FQH) effect. We find that voltage-current characteristics depend on current sweep rates at the quantum Hall states of Landau-level filling factors nu=1, 2/3, and 1/3. The sweep-rate dependence is attributed to DNP occurring in the breakdown regime of FQH states. Results of a pump and probe experiment show that the polarity of the DNP induced in the breakdown regimes of the FQH states is opposite to that of the DNP induced in the breakdown regimes of odd-integer quantum Hall states.
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