Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures

We report measurements of the spin susceptibility and the electron effective mass for two-dimensional electrons confined at the interfaces of MgxZn1-xO/ZnO single heterostructures (x=0.05, 0.08, and 0.11), grown by molecular-beam epitaxy on (0001) ZnO substrates. By tuning the built-in polarization through control of the barrier composition, the electron density was systematically varied in the range of 5.6x10(11)-1.6x10(12) cm(-2), corresponding to a range of 3.1 <= r(s)<= 5.2, where r(s) is the average electron spacing measured in units of the effective Bohr radius. We used the coincidence technique, where crossings of the spin-split Landau levels occur at critical tilt angles of magnetic field, to evaluate the spin susceptibility. In addition, we determined the effective mass from the temperature dependence of the Shubnikov-de Haas oscillations measured at the coincidence conditions. The susceptibility and the effective mass both gradually increase with decreasing electron density, reflecting the role of electron-electron interaction.