Journal
PHYSICAL REVIEW B
Volume 78, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.205403
Keywords
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Funding
- NSF [DMR-06545698, ECCS-0802125]
- Nanoelectronics Research Initiative (NRI) through the Midwest Institute for Nanoelectronics Discovery (MIND)
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The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi-level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.
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