Journal
PHYSICAL REVIEW B
Volume 78, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.235301
Keywords
crystal structure; elemental semiconductors; gallium arsenide; III-V semiconductors; nanotechnology; nanowires; semiconductor growth; semiconductor quantum wires; silicon; solid-state phase transformations
Funding
- Russian Federal Agency for Science and Innovation [02.513.11.3042]
- SANDIE Network of Excellence of the European Commission [. NMP4-CT-2004500101]
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Theoretical model for the growth of semiconductor nanowires is developed, which enables one to determine the growth conditions under which the formation of nanowires is possible. General expression for the nanowire growth rate as function of its radius and the growth conditions is obtained and analyzed. The model also describes the transformation from cubic to hexagonal crystal phase of nanowires. It is shown that the observed crystal structure is controlled mainly by the growth kinetics. Structural diagrams and probabilities of cubic and hexagonal phase formation are calculated as functions of supersaturation and nanowire radius within the plausible range of material parameters. Numerical estimates for the domains of phase mixing and phase purity are presented and analyzed.
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