Journal
PHYSICAL REVIEW B
Volume 77, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.113204
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Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (V-Zn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200 degrees C. The further annealing at 400 degrees C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisitcs (V-Zn-ZnO).
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