Related references
Note: Only part of the references are listed.Native point defects in ZnO
Anderson Janotti et al.
PHYSICAL REVIEW B (2007)
Homoepitaxy of ZnO:: from the substrates to doping
C. Neumann et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2007)
Preparation of ZnO substrates for epitaxy:: Structural, surface, and electrical properties
S. Graubner et al.
APPLIED PHYSICS LETTERS (2007)
Comparative study of the (0001) and 000(1)over-bar surfaces of ZnO
S. A. Chevtchenko et al.
APPLIED PHYSICS LETTERS (2006)
Evidence for native-defect donors in n-type ZnO -: art. no. 225502
DC Look et al.
PHYSICAL REVIEW LETTERS (2005)
Introduction and recovery of point defects in electron-irradiated ZnO
F Tuomisto et al.
PHYSICAL REVIEW B (2005)
Theory of Li in ZnO:: A limitation for Li-based p-type doping -: art. no. 155205
MG Wardle et al.
PHYSICAL REVIEW B (2005)
Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
F Tuomisto et al.
APPLIED PHYSICS LETTERS (2005)
Magnesium incorporation in GaN grown by molecular-beam epitaxy
AJ Ptak et al.
APPLIED PHYSICS LETTERS (2001)
Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
U Karrer et al.
APPLIED PHYSICS LETTERS (2000)
Photoluminescence measurements from the two polar faces of ZnO
RE Sherriff et al.
JOURNAL OF APPLIED PHYSICS (2000)
Dependence of impurity incorporation on the polar direction of GaN film growth
M Sumiya et al.
APPLIED PHYSICS LETTERS (2000)
Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
LK Li et al.
APPLIED PHYSICS LETTERS (2000)