Journal
PHYSICAL REVIEW B
Volume 78, Issue 11, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.115432
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Resonant scattering of electrons with low energies (as compared to the bandwidth) on a single neutral short-range impurity in graphene is analyzed theoretically, taking into account the valley degeneracy. Resonances dramatically increase the scattering cross section and introduce a strong energy dependence. Analysis of the tight-binding model shows that resonant scattering is typical for generic impurities as long as they are sufficiently strong (the potential is of the order of the electron bandwidth or higher).
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