Journal
PHYSICAL REVIEW B
Volume 77, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.235315
Keywords
-
Ask authors/readers for more resources
We report microphotoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape in order to explain the quantitative differences between our observations and those previously reported on, e.g., CdTe- or InAs-based quantum dots.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available