4.6 Article

Atomistic simulations of the mechanical properties of silicon carbide nanowires

Related references

Note: Only part of the references are listed.
Article Nanoscience & Nanotechnology

Growth of SiC nanowires/nanorods using a Fe-Si solution method

Guangyi Yang et al.

NANOTECHNOLOGY (2007)

Article Materials Science, Multidisciplinary

Simulations of the mechanical properties of crystalline, nanocrystalline, and amorphous SiC and Si

V. I. Ivashchenko et al.

PHYSICAL REVIEW B (2007)

Article Physics, Applied

Simple approach to β-SiC nanowires:: Synthesis, optical, and electrical properties

Weimin Zhou et al.

APPLIED PHYSICS LETTERS (2006)

Article Materials Science, Multidisciplinary

Silicon carbide nanowires under external loads: An atomistic simulation study

Maxim A. Makeev et al.

PHYSICAL REVIEW B (2006)

Article Physics, Multidisciplinary

Novel phase transformation in ZnO nanowires under tensile loading

Ambarish J. Kulkarni et al.

PHYSICAL REVIEW LETTERS (2006)

Article Materials Science, Multidisciplinary

Deformation of FCC nanowires by twinning and slip

Harold S. Park et al.

JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS (2006)

Article Physics, Applied

Uniaxial-stress effects on electronic properties of silicon carbide nanowires

Binghai Yan et al.

APPLIED PHYSICS LETTERS (2006)

Article Chemistry, Multidisciplinary

Stress-induced martensitic phase transformation in intermetallic nickel aluminum nanowires

Harold S. Park

NANO LETTERS (2006)

Article Chemistry, Multidisciplinary

Anisotropic etching of SiC whiskers

GZ Cambaz et al.

NANO LETTERS (2006)

Article Nanoscience & Nanotechnology

Buckling instabilities in GaN nanotubes under uniaxial compression

SC Hung et al.

NANOTECHNOLOGY (2005)

Article Materials Science, Multidisciplinary

Modeling inelasticity and failure in gold nanowires

HS Park et al.

PHYSICAL REVIEW B (2005)

Article Materials Science, Multidisciplinary

Nanomechanical behavior of β-SiC nanowire in tension:: Molecular dynamics simulations

TY Kim et al.

MATERIALS TRANSACTIONS (2004)

Article Materials Science, Multidisciplinary

Theoretical study of the formation, evolution, and breaking of gold nanowires

EZ da Silva et al.

PHYSICAL REVIEW B (2004)

Article Physics, Applied

Optical and electrical transport properties in silicon carbide nanowires

HK Seong et al.

APPLIED PHYSICS LETTERS (2004)

Article Physics, Applied

Atomic-level study of ion-induced nanoscale disordered domains in silicon carbide

F Gao et al.

APPLIED PHYSICS LETTERS (2003)

Article Materials Science, Multidisciplinary

Cascade overlap and amorphization in 3C-SiC: Defect accumulation, topological features, and disordering

F Gao et al.

PHYSICAL REVIEW B (2002)

Article Physics, Applied

Atomic scale simulation of defect production in irradiated 3C-SiC

R Devanathan et al.

JOURNAL OF APPLIED PHYSICS (2001)

Article Materials Science, Multidisciplinary

Atomic-scale simulation of 50 keV Si displacement cascades in β-SiC

F Gao et al.

PHYSICAL REVIEW B (2001)