Journal
PHYSICAL REVIEW B
Volume 78, Issue 4, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.041408
Keywords
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Funding
- National Research Foundation of Korea [과06A1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Z-V scanning tunneling spectroscopy is used to probe the topology and electron scattering properties of the electronic interfaces of monolayer and bilayer graphenes, expitaxially grown on SiC(0001). The dZ/dV spectra validate existing calculations of the interface topology and provide evidence for new electron scattering properties due to changes in the electronic character of the bonding. Two sharp boundaries are observed: between the vacuum and the graphene pi state lying above the graphene atom plane and a subsurface barrier between the carbon-rich layer and the bulk SiC.
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