Journal
PHYSICAL REVIEW B
Volume 77, Issue 7, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.073310
Keywords
-
Ask authors/readers for more resources
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-potential coupling accounts for inelastic tunneling through the ground states of the two dots. Such transport measurements enable us to observe a Pauli spin blockade due to effective two-electron spin-triplet correlations, evident in a distinct bias-polarity dependence of resonant tunneling through the ground states. The blockade is lifted by the excited-state resonance by virtue of efficient phonon emission between the ground states. Our experiment demonstrates considerable potential for investigating silicon-based spin dynamics and spin-based quantum information processing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available