Surface electronic structure of Mn/Si(111)-√3x√3

The Mn/Si(111)-root 3x root 3 surface has been studied in detail by low energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), and core-level photoelectron spectroscopy (CLS). Annealing of the deposited manganese resulted in a well-ordered surface as seen by intense root 3X root 3 LEED spots. ARPES spectra recorded in the (Gamma)over bar-(K)over bar-(M)over bar direction of the root 3x root 3 surface Brillouin zone show five surface related features in the band gap while in the (Gamma)over bar-(M)over bar-(Gamma)over bar direction four surface features are observed. The high-resolution Si 2p CLS data were recorded at photon energies between 108-140 eV both at normal and 60 degrees emission angle. The bulk component was identified from the bulk sensitive spectrum recorded at a photon energy of 108 eV. To achieve a consistent core-level fitting over the whole energy and angular range, five components were introduced in the line-shape analysis. The photoemission data from the root 3x root 3 surface have been discussed and compared with a recent theoretical model. The findings here support a layered Mn silicide film structure.