Journal
PHYSICAL REVIEW B
Volume 78, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.125307
Keywords
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Funding
- National Science Foundation
- Office of Naval Research
- KIST-MIT
- NSF CAREER [ECS-0239058]
- ONR [N00014-06-1-0616]
- Institute for Materials Research at Wayne State University
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EuO1-x-a remarkably versatile ferromagnetic semiconductor with variable transport properties incorporated into a heterostructure with n+ doped silicon is shown to be similar to 90% spin polarized by Andreev reflection (AR) spin spectroscopy. The AR measurements were done in a planar geometry with an InSn superconducting film. A simple reactive growth technique was used to controllably introduce oxygen vacancies into EuO1-x to adjust its carrier concentration. We demonstrate by direct measurements of spin polarization that half-metallicity of EuO1-x can be achieved in the films conductively matched with Si, thus making EuO1-x one of the most attractive materials for silicon-based spintronics.
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