Related references
Note: Only part of the references are listed.Two-dimensional carbon incorporation into Si(001):: C amount and structure of Si(001)-c(4x4) -: art. no. 076102
H Kim et al.
PHYSICAL REVIEW LETTERS (2005)
Dimer buckling of the Si(001)2x1 surface below 10 K observed by low-temperature scanning tunneling microscopy
M Ono et al.
PHYSICAL REVIEW B (2003)
Low-energy electron diffraction study of the phase transition of Si(001) surface below 40 k
M Matsumoto et al.
PHYSICAL REVIEW LETTERS (2003)
Understanding ultrahigh doping: The case of boron in silicon
X Luo et al.
PHYSICAL REVIEW LETTERS (2003)
First-principles simulation: ideas, illustrations and the CASTEP code
MD Segall et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Growth of Si twinning superlattice
H Hibino et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2001)
Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure
JF Nielsen et al.
APPLIED PHYSICS LETTERS (2001)
Athermal annealing of low-energy boron implants in silicon
DW Donnelly et al.
APPLIED PHYSICS LETTERS (2001)
Ultrahigh B doping (≤1022 cm-3) during Si(001) gas-source molecular-beam epitaxy:: B incorporation, electrical activation, and hole transport
G Glass et al.
PHYSICAL REVIEW B (2000)
Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon
LS Robertson et al.
JOURNAL OF APPLIED PHYSICS (2000)