Journal
PHYSICAL REVIEW B
Volume 77, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.201402
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Funding
- Engineering and Physical Sciences Research Council [EP/D008506/1] Funding Source: researchfish
- EPSRC [EP/D008506/1] Funding Source: UKRI
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We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cooldown, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground plane.
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