Journal
PHYSICAL REVIEW B
Volume 77, Issue 8, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.081401
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We report on the formation of quasi-two-dimensional nanostructures of silicon by quenching liquid silicon confined in slit nanopores. The formation processes are investigated by molecular-dynamics (MD) calculations using the Tersoff potential. We find that single- or double-layer nanosheets are formed according to the slit width. Both of these nanosheets contain hexagonal planes, and the structure of the single-layer nanosheet is the same as that of graphene. The stability of these nanosheets within the slit nanopore is confirmed by first-principles MD calculations up to 300 K. The present findings demonstrate the possibility of the synthesis of novel nanostructures by confinement in nanopores.
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