Journal
PHYSICAL REVIEW B
Volume 78, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.233309
Keywords
electronic density of states; elemental semiconductors; Ge-Si alloys; magnetoresistance; metal-insulator transition; semiconductor quantum wells; silicon; two-dimensional electron gas
Funding
- DOE
- NSF [DMR-0084173]
- NSF-MRSEC [DMR-0213706]
- DOE/Basic Energy Science
- AFOSR [FA9550-04-1-0370]
- FWF [SFB025]
- State of Florida
Ask authors/readers for more resources
We report measurements of in-plane field magnetoresistivity of the two-dimensional electrons in two Si/SiGe quantum wells with different disorder strength at 20 mK. For both samples, the ratio of the saturation resistivity in the high magnetic field to the zero-field resistivity was approximately constant in the high-density limit. In the metallic to insulating transition (MIT) regime, it is strongly enhanced and appears diverging as the electron density approaches a sample-dependent characteristic density n(*). n(*) is below n(c), the critical density of MIT at which the temperature dependence of resistivity changes sign. Disorder is believed to play an important role in this phenomenon. Furthermore, the field at which the magnetoresistivity saturates appears to extrapolate to zero, suggesting that ferromagnetic instability does not occur in Si/SiGe, at least down to n similar to 0.3x10(11)/cm(2).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available