Journal
PHYSICAL REVIEW B
Volume 78, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.78.233311
Keywords
aluminium compounds; gallium arsenide; galvanomagnetic effects; high-frequency effects; III-V semiconductors; quantum interference phenomena; semiconductor quantum dots
Funding
- UK National Measurement System's Quantum Metrology Programme
- AFRL [FA9453-07-C-0207]
- EPSRC-GB QIP IRC [GR/S82176/01]
- EPSRC [EP/D008506/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [GR/S82176/01, EP/D008506/1] Funding Source: researchfish
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We present experimental results of high-frequency quantized charge pumping through a quantum dot formed by the electric field arising from applied voltages in a GaAs/AlGaAs system in the presence of a perpendicular magnetic field B. Clear changes are observed in the quantized current plateaus as a function of applied magnetic field. We report on the robustness in the length of the quantized plateaus and improvements in the quantization as a result of the applied B field.
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