Journal
PHYSICAL REVIEW B
Volume 77, Issue 24, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.77.245424
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Scanning tunneling microscopy and low energy electron diffraction are used to investigate the evolution of the stacking fault covered surface area during growth and annealing of thin Ir films on Ir(111). Key elements driving the evolution of faulted surface area with film thickness are identified.
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