Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 16, Issue 41, Pages 22448-22457Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp01700e
Keywords
-
Funding
- National Natural Science Foundation of China [20721061, 21190034, 21233001, 51033006, 51222306, 91027043, 91222203, 91233205]
- China-Denmark Co-project [60911130231]
- Ministry of Science and Technology of China [2011CB808400, 2011CB932300, 2013CB933403, 2013CB933500, 2012CB933102]
- Beijing NOVA Programme [Z131101000413038]
- Beijing Local College Innovation Team Improve Plan [IDHT20140512]
- Chinese Academy of Sciences, Specialized Research Fund for the Doctoral Program of Higher Education [SRFDP. 20110211130001]
- Fundamental Research Funds for the Central Universities
- 111 Project
- TRR61 (NSFC-DFG Transregio Project)
Ask authors/readers for more resources
Remarkable progress has recently been achieved in n-type and ambipolar OFETs. In this mini review, we will highlight the representative development of high performance n-type and ambipolar organic semiconductors (OSCs) especially for those n-type small OSCs with thin film mobilities >1 cm(2) V-1 s(-1), and ambipolar small OSCs with both hole and electron mobilities of over 0.1 cm(2) V-1 s(-1). This overview shall provide a meaningful guideline for further development of high performance n-type and ambipolar materials and devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
