Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 15, Issue 18, Pages 6965-6972Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3cp50836f
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Funding
- Institutional Research Concept of the project CENAKVA [CZ.1.05/2.1.00/01.0024]
- Grant Agency of the University of South Bohemia [152/2010/Z]
- School of Material Engineering, Malaysia University of Perlis, Malaysia
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Photoelectrical properties of Tl1-xIn1-xSnxSe2 single crystalline alloys (x = 0, 0.1, 0.2, 0.25) grown using the Bridgman-Stockbarger method were studied. The temperature dependence of electrical and photoconductivity for the Tl1-xIn1-xSnxSe2 single crystals was explored. It has been established that photosensitivity of the Tl1-xIn1-xSnxSe2 single crystals increases with x. The spectral distribution of photocurrent in the wavelength spectral range 400-1000 nm has been investigated at various temperatures. Photoconductivity increases in all the studied crystals with temperature. Therefore, thermal activation of photoconductivity is caused by re-charging of the photoactive centers as the samples are heated. Based on our investigations, a model of center re-charging is proposed that explains the observed phenomena. X-ray photoelectron valence-band spectra for pristine and Ar+-ion irradiated surfaces of the Tl1-xIn1-xSnxSe2 single crystals have been measured. These results reveal that the Tl1-xIn1-xSnxSe2 single-crystal surface is sensitive to the Ar+ ion irradiation that induced structural modification in the top surface layers. Comparison on a common energy scale of the X-ray emission Se K beta(2) bands representing energy distribution of the Se 4p-like states and the X-ray photoelectron valence-band spectra was done.
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